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| MUR6020 Ultra Fast Recovery Diodes Dimensions TO-247AC A C(TAB) C A=Anode, C=Cathode, TAB=Cathode A C Dim. A B C D E F G H J K L M N Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 MUR6020 VRSM V 200 VRRM V 200 Symbol IFRMS IFAVM IFRM Test Conditions TVJ=TVJM TC=85oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM TVJ=45oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine Maximum Ratings 98 69 800 600 650 540 580 1800 1770 1460 1410 -40...+150 150 -40...+150 Unit A IFSM TVJ=150oC TVJ=45oC A I2t TVJ=150oC A2s TVJ TVJM Tstg Ptot Md Weight TC=25oC Mounting torque o C 150 0.8...1.2 6 W Nm g MUR6020 Ultra Fast Recovery Diodes Symbol Test Conditions TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM IF=60A; TVJ=150oC TVJ=25oC For power-loss calculations only TVJ=TVJM Characteristic Values typ. max. 50 40 11 0.88 1.08 0.70 4.0 0.75 0.25 35 Unit uA uA mA V V m K/W IR VF VTO rT RthJC RthCK RthJA trr IRM IF=1A; -di/dt=200A/us; VR=30V; TVJ=25oC _ VR=100V; IF=60A; -diF/dt=200A/us; L<0.05uH; TVJ=100 C o 35 8 50 10 ns A FEATURES * International standard package JEDEC TO-247AC * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour APPLICATIONS * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating and melting * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders ADVANTAGES * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses * Operating at lower temperature or space saving by reduced cooling MUR6020 Ultra Fast Recovery Diodes 160 A 140 Qr IF 120 100 80 0.4 0.6 0.8 uC TVJ= 100C VR = 100V IRM 30 A 25 TVJ= 100C VR = 100V IF= 35A IF= 70A IF=140A TVJ=150C 20 15 10 IF= 35A IF= 70A IF=140A 60 TVJ=100C 40 20 0.2 5 TVJ=25C 0 0.0 0.4 0.8 VF 1.2 V 0.0 10 0 100 A/us 1000 -diF/dt 0 200 400 600 A/us 1000 800 -diF/dt Fig. 1 Forward current IF versus VF Fig. 2 Typ. reverse recovery charge Qr versus -diF/dt 70 ns 60 trr 50 40 Fig. 3 Typ. peak reverse current IRM versus -diF/dt 5 V VFR 4 2.5 TVJ= 100C IF = 100A us 2.0 tfr 1.6 1.4 Kf 1.2 1.0 0.8 0.6 0.4 0.2 0 40 80 120 C 160 TVJ TVJ= 100C VR = 100V tfr 3 VFR 1.5 IRM 30 20 IF=35A IF=70A IF=140A 2 1.0 Qr 1 10 0 0 200 400 600 A/us 800 -diF/dt 1000 0 0 200 400 600 diF/dt 0.5 0.0 A/us 800 Fig. 4 Dynamic parameters Qr, IRM versus TVJ 1.0 K/W 0.8 ZthJC 0.6 Fig. 5 Typ. recovery time trr versus -diF/dt Fig. 6 Typ peak forward voltage VFR and tfr versus diF/dt 0.4 0.2 0.0 0.001 0.01 0.1 1 t s 10 Fig. 7 Transient thermal impedance junction to case |
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